elektronische bauelemente S2N7002KW 115ma, 60v n-channel enhancement mosfet 10-jan-2010 rev. a page 1 of 2 top view a l c b d g h j f k e 1 2 3 1 2 3 rohs compliant product a suffix of ?-c? specifies halogen & lead-free features z low on-resistance z fast switching speed z low-voltage drive z easily designed drive circuits z esd protected:1500v device marking: rk maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit drain ? source voltage v dss 60 v continuous gate ? source voltage v gss 20 v continuous drain current i d 115 ma pulsed drain current i dp 1 800 ma continuous reverse drain current i dr 115 ma pulsed reverse drain current i drp 1 800 ma total power dissipation p d 2 225 mw channel & storage temperature range t ch , t stg 150, -55~150 c note: 1. pw Q 10 s, duty cycle Q 1% 2. when mounted on a 1x0.75x0.062 inch glass epoxy board electrical characteristics (t a = 25c unless otherwise specified, per element) parameter symbol min typ max unit test condition off characteristics 2 drain-source breakdown voltage v (br)dss 60 - - v v gs =0v, i d =10 a zero gate voltage drain current i dss - - 1.0 a v ds =60v, v gs =0v gate-source leakage i gss - - 10 a v ds =0v , v gs =20v on characteristics 2 gate-threshold voltage v gs(th) 1 1.85 2.5 v v ds = v gs, i d =250 a - - 7.5 v gs =10v, i d =0.5a static drain-source on resistance r ds(on) - - 7.5 ? v gs =5v, i d =0.05a forward transfer admittance g fs * 80 - - ms v ds =10v, i d =0.2a dynamic characteristics input capacitance c iss - 25 50 v ds =25v output capacitance c oss - 10 25 v gs =0v reverse transfer capacitance c rss - 3.0 5 pf f=1mhz switching characteristics turn-on delay time t d(on) * - 12 20 turn-off delay time t d(off) * - 20 30 ns v dd =30v, i d =0.2a r l =150 ? , v gs =10v, r g =10 ? * pw Q 300 s, duty cycle Q 1% sot-323 millimete r millimete r ref. min. max. ref. min. max. a 1.80 2.20 g 0.100 ref. b 1.80 2.45 h 0.525 ref. c 1.15 1.35 j 0.08 0.25 d 0.80 1.10 k - - e 1.20 1.40 l 0.650 typ. f 0.20 0.40
elektronische bauelemente S2N7002KW 115ma, 60v n-channel enhancement mosfet 10-jan-2010 rev. a page 2 of 2 characteristic curves
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